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| Data Sheet TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT General Description The AH211 is an integrated Hall sensor with output driver and frequency generator designed for electronic commutation of brush-less DC motor applications. The device includes an on-chip Hall sensor for magnetic sensing, an amplifier that amplifies the Hall voltage, a Schmitt trigger to provide switching hysteresis for noise rejection, a temperature compensation circuit to compensate the temperature drift of Hall sensitivity, two complementary open-collector drivers for sinking large load current. It also includes an internal band-gap regulator which is used to provide bias voltage for internal circuits. Place the device in a variable magnetic field, while the magnetic flux density is larger than threshold BOP, DO will be turned on (low) and DOB (and FG) will be turned off (high). This output state is held till the magnetic flux density reversal falls below BRP causing DO to be turned off (high) and DOB (and FG) turned on (low). AH211 is available in TO-94 (SIP-4L) package. AH211 Features * * * * * * * On-Chip Hall Sensor 3.5V to 16V Supply Voltage 400mA (avg) Output Sink Current -20oC to 85oC Operating Temperature Built-in FG Output Low Profile TO-94 (SIP-4L) Package ESD Rating: 300V (Machine Model) Applications * * * * Dual-Coil Brushless DC Motor Dual-Coil Brushless DC Fan Revolution Counting Speed Measurement TO-94 Figure 1. Package Type of AH211 Mar. 2007 Rev. 1.3 1 BCD Semiconductor Manufacturing Limited Data Sheet TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT Pin Configuration Z4 Package (TO-94) AH211 4 3 2 1 GND DOB DO FG Figure 2. Pin Configuration of AH211 (Front View) Pin Description Pin Number 1 2 3 4 Pin Name FG DO DOB GND Frequency Generation Output 1 Output 2 Ground Function Mar. 2007 Rev. 1.3 2 BCD Semiconductor Manufacturing Limited Data Sheet TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT Functional Block Diagram AH211 Regulator Temperature Compensation 2 DO Hall Sensor Amplifier Schmitt Trigger Output Driver 3 DOB 4 1 FG Figure 3. Functional Block Diagram of AH211 GND Ordering Information AH211 Circuit Type Package Z4: TO-94 (SIP-4L) E1: Lead Free Magnetic Characteristics A: 5 to 60 Gauss B: 90 Gauss Package TO-94 Temperature Range -20 to 85 oC Part Number AH211Z4-AE1 AH211Z4-BE1 Marking ID AH211 AH211 Packing Type Bulk Bulk BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Mar. 2007 Rev. 1.3 3 BCD Semiconductor Manufacturing Limited Data Sheet TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT Absolute Maximum Ratings (Note 1) (TA=25oC) Parameter Supply Voltage Magnetic Flux Density Continuous Output Current Hold Peak (start up) FG Current Power Dissipation Die to atmosphere Thermal Resistance Die to package case Storage Temperature ESD (Machine Model) ESD (Human Body Model) IFG PD JA JC TSTG IO Symbol VCC B Value 20 Unlimited 400 600 800 20 550 227 49 -50 to 150 300 3000 Unit V Gauss mA mA mA mA mW oC/W oC/W oC AH211 V V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. "Absolute Maximum Ratings" for extended period may affect device reliability. Recommended Operating Conditions (TA=25oC) Parameter Supply Voltage Ambient Temperature Symbol VCC TA Min 3.5 -20 Max 16 85 Unit V o C Mar. 2007 Rev. 1.3 4 BCD Semiconductor Manufacturing Limited Data Sheet TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT Electrical Characteristics (TA=25oC, VCC=14V, unless otherwise specified) Parameter Symbol Test Condition B>150Gauss, VCC=3.5V, VDOB=VCC, IDO=100mA (or B<-150Gauss, VCC=3.5V, VDO=VCC, IDOB=100mA) Output Saturation Voltage VSAT B>150Gauss, VDOB=VCC, IDO=400mA (or B<-150Gauss, VDO=VCC, IDOB=400mA) FG Saturation Voltage VSATF IOLF ICC tr tf t VZ B<-150Gauss, VDO=VCC, IFG=20mA B>150Gauss, VDOB=VCC, VFG=16V B>150Gauss, VDOB=VCC, (or B<-150Gauss, VDO=VCC ) RL=1k, CL=10pF RL=1k, CL=10pF RL=1k, CL=10pF 1.05 1.3 V Min Typ Max Unit AH211 1.1 V 0.35 0.6 V A FG Leakage Current 0.1 10 Supply Current Output Rise Time Output Fall Time Switch Time Differential Output Zener Breakdown Voltage 8 3.0 0.3 3.0 55 10 10 1.0 10 mA s s s V Magnetic Characteristics (TA=25oC) Parameter Operating Point Symbol BOP BRP BHYS Grade A B Releasing Point Hysteresis A B -60 -90 60 -30 Min 5 Typ 30 Max 60 90 -5 Unit Gauss Gauss Gauss Gauss Gauss Mar. 2007 Rev. 1.3 5 BCD Semiconductor Manufacturing Limited Data Sheet TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT Magnetic Characteristics (Continued) AH211 +14V S FG AH211 DO DOB GND Marking Side R1 1k R2 1k R3 1k 1 2 3 4 FG (VFG) DO (VOUT1) DOB (VOUT2) N C1 C2 C3 10pF 10pF 10pF Figure 4. Basic Test Circuit DO (V) 16 DOB (V) 16 14 12 10 8 6 4 2 -20 0 20 40 VCC 14 12 10 8 6 4 2 VCC VSAT 20 40 VSAT -40 -40 -20 0 Magnetic Flux Density B (Gauss) Magnetic Flux Density B (Gauss) Figure 5. VDO vs. Magnetic Flux Density Figure 6. VDOB vs. Magnetic Flux Density Mar. 2007 Rev. 1.3 6 BCD Semiconductor Manufacturing Limited Data Sheet TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT Typical Performance Characteristics AH211 80 8 7 6 60 40 ICC (mA) 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 22 24 BOP, BRP, BHYS (GS) 20 0 -20 BOP BRP BHYS -40 -60 4.0 6.0 8.0 10.0 12.0 14.0 16.0 VCC (V) VCC (V) Figure 7. ICC vs. VCC Figure 8. BOP/BRP/BHYS vs. VCC 80 800 60 BOP, BRP, BHYS (Gauss) 40 600 PD (mW) BOP BRP BHYS -20 -10 0 10 20 30 40 50 60 70 80 20 400 0 -20 200 -40 -60 0 -25 0 25 50 75 100 125 150 TA ( C) o TA ( C) o Figure 9. BOP/BRP/BHYS vs. Ambient Temperature Figure 10. PD vs. Ambient Temperature Mar. 2007 Rev. 1.3 7 BCD Semiconductor Manufacturing Limited Data Sheet TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT Typical Performance Characteristics (Continued) 12 11 10 9 AH211 1200 PIN2 PIN3 VCC=14V 1100 Supply Current (mA) 1000 IO=300mA IO=400mA VCC=14V 8 6 5 4 VSAT (mV) 7 900 800 700 3 2 1 0 -20.0 0.0 20.0 40.0 o 600 60.0 80.0 500 -20.0 0.0 20.0 40.0 o 60.0 80.0 Ambient Temparature ( C) Ambient Temparature ( C) Figure 11. Supply Current vs. Ambient Temperature Figure 12. VSAT vs. Ambient Temperature Mar. 2007 Rev. 1.3 8 BCD Semiconductor Manufacturing Limited Data Sheet TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT Application Information Figure 13 is the typical application circuit for AH211. Usually, there are three wires for fan connection: the red is input of power supply; the yellow is the output of FG; the black is the ground. R1 is an external pull-up resister for the use of measuring FG signal from fan. The value of R1 could be decided by the transistor saturation voltage (VON), sink current (IFG), and pullup voltage (VDD). The calculation formula is: R1=(VDD-VON) / IFG For example: VDD=5V for TTL level. If saturation voltage is 0.6V (IC specification) IFG=20mA ( 20mA) , then R1=220 ; If saturation voltage is 0.1V, IFG=1mA (=<20mA) , the value of R1=4.9k According AH211's specification, if VDD=5V, R1 must be larger than 220. D1 is the reverse protection diode. If the red and black wires reversely connected, the current will flow from the ground via IC and coils L1 and L2 to power supply. Under such circumstances, the IC and coils are easy to be burned out. Therefore, the reverse protection diode D1is necessary. However, D1 will also cause an extra voltage drop on the supply voltage. C1 is a capacitor to reduce the ripple noise caused by the transient of the output stages. The amplitude of the ripple noise depends on the coil impedance and its characteristics. AH211 VCC (Red Wire) D1 C1 FG AH211 COIL1 DO DOB GND COIL2 1 VDD FG (Yellow Wire) GND (Black Wire) R1 1k 2 3 4 Figure 13. AH211 Typical Application Circuit Mar. 2007 Rev. 1.3 9 BCD Semiconductor Manufacturing Limited Data Sheet TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT Mechanical Dimensions TO-94 0.500(0.020) 0.700(0.028) 1.400(0.055) 1.800(0.071) 4.980(0.196) 5.280(0.208) 1.850(0.073) 0.360(0.014) 0.510(0.020) 3.780(0.149) 4.080(0.161) 45TYP AH211 Unit: mm(inch) 0.700(0.028) 0.900(0.035) 1.250(0.050) Hall Sensor Location 0.380(0.015) 0.550(0.022) 0.360(0.014) 0.500(0.020) 14.900(0.587) 15.300(0.602) 1.270(0.050) TYP 3.710(0.146) 3.910(0.154) Mar. 2007 Rev. 1.3 10 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 30920 Huntwood Ave. Hayward, CA 94544, U.S.A Tel : +1-510-324-2988 Fax: +1-510-324-2788 |
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